Black-Box Modeling of EMI Filters for Frequency and Time-Domain Simulations

Black Box Modelling of Power Transistors in the Frequency Domain

A frequency domain black box model for power transistors is proposed. It can accurately predict the behavior of the transistor for a one tone excitation with arbitrary fundamental and harmonic impedances present at the output. The model parameters can be extracted out of a limited set of “nonlinear network analyzer” measurements. Both simulated as well as measured results are given. Introductio...

Modeling of Power Semiconductors in Vhdl-ams for Emi Simulations

The static converters are important sources of EMI. In order to reproduce the converters functioning by simulation, a special effort must be provided for the silicon component modeling. In our survey case, these models must be well adapted to the static converters simulation for EMC characterization. In this paper, we have focused on the semiconductor models by providing an IGBT VHDL-AMS model....

PMU-Based Matching Pursuit Method for Black-Box Modeling of Synchronous Generator

This paper presents the application of the matching pursuit method to model synchronous generator. This method is useful for online analysis. In the proposed method, the field voltage is considered as input signal, while the terminal voltage and active power of the generator are output signals. Usually, the difference equation with a second degree polynomial structure is used to estimate the co...

Black-Box Modelling of Integrated Circuits for Electromagnetic Compatibility Simulations

This paper presents an overview of the state-of-the-art in black-box modelling with focus on modelling integrated circuits using artificial neural networks. The trade-offs of different model architectures are discussed, including the model building time, training algorithm complexity, and model execution time in circuit simulators. An interchangeable black-box model of a bandgap reference block...

Behavioural Models for Common Mode EMI Filters